2SC5809

更新时间： 2024-09-25 22:52:47

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松下 - PANASONIC		/
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描述
Silicon NPN triple diffusion planar type

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2SC5809 数据手册

Power Transistors

2SC5809

Silicon NPN triple diffusion planar type

Unit: mm

4.6 0.2

For high breakdown voltage high-speed switching

9.9 0.3

2.9 0.2

φ 3.2 0.1

■ Features

• High-speed switching (Fall time t_fis short)

• High collector-base voltage (Emitter open) V_CBO

• Low collector-emitter saturation voltage V_CE(sat)

• TO-220D built-in: Excellent package with withstand voltage 5 kV

guaranteed

1.4 0.2

1.6 0.2

2.6 0.1

0.8 0.1

0.55 0.15

■ Absolute Maximum Ratings T_C= 25°C

2.54 0.30

5.08 0.50

Parameter

Symbol

Rating

Unit

1: Base

2: Collector

3: Emitter

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

800

500

TO-220D-A1 Package

Collector current

I_C

I_CP

P_C

Marking Symbol: C5809

Internal Connection

Peak collector current

T_C= 25°C

T_a= 25°C

Collector power

dissipation

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

V_CEO

I_CBO

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_C= 10 mA, I_B= 0

500

V_CB= 800 V, I_E= 0

V_EB= 5 V, I_C= 0

100

µA



I_EBO

h_FE1

V_CE= 5 V, I_C= 0.1 A

V_CE= 5 V, I_C= 3 A

h_FE2

Collector-emitter saturation voltage

Transition frequency

Turn-on time

V_CE(sat)I_C= 3 A, I_B= 0.6 A

0.3

0.6

MHz

µs

f_T

t_on

t_stg

t_f

V_CE= 10 V, I_C= 0.5 A, f = 1 MHz

I_C= 3.0 A, Resistance loaded

I_B1= 0.6 A, I_B2= − 0.6 A

V_CC= 200 V

1.1

2.0

0.3

Storage time

µs

Fall time

µs

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: November 2002

SJD00291AED

12 3

中文翻译

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