Datasheet > 2SC5807_07

2SC5807_07

更新时间： 2024-09-26 04:26:07

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
5页	89K
描述
Silicon NPN Epitaxial Type

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数据手册

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2SC5807_07 数据手册

〈Transistor〉

2SC5807

For Low Frequency Amplify Application

Silicon NPN Epitaxial Type

DESCRIPTION

OUTLINE DRAWING

Unit：ｍｍ

2SC5807 is a silicon NPN epitaxial Transistor.

4.6 MAX

1.6

It designed with high collector current and high collector dissipation.

1.5

FEATURE

●High collector current IC=5A

●Small collector to Emitter saturation voltage

VCE(sat)=0.25V TYP. (@IC=4A,IB=100mA)

●High collector dissipation PC=500mW

0.53

MAX

0.4

0.48 MAX

MARKING

1.5

APPLICATION

3.0

For storobe ,DC/DC convertor,power amplify apprication

TERMINAL CONNECTER

Ｅ: EMITTER

Ｃ: COLLECTOR

Ｂ: BASE

EIAJ : SC-62

JEDEC :

Note)

The dimension without tolerance represent central value.

MARKING

TYPE NAME

ＡＫ

Ｑ

LOT No.

ｈ_ＦＥITEM

MAXIMUM RATINGS (Ta=25℃)

SYMBOL

V_CBO

V_EBO

V_CEO

I _C

PARAMETER

Collector to Base voltage

Emitter to Base voltage

RATINGS

UNIT

Collector to Emitter voltage

Collector current

I _CM

Peak Collecter current *1

Collector dissipation (Total、Ta=25℃)

Collector dissipation (Total、Ta=25℃) *2

Junction temperature

0.5

P_C

T_j

＋150

-55～＋150

℃

T_stg

Storage temperature

*1 Single Pulse Pw=10msec

*2 Pakkage mounted on 35mm×50mm×0.8mm ceramic board.

ISAHAYA ELECTRONICS CORPORATION

12 3 4 5

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