Datasheet > 2SC5810(TE12L,F)

2SC5810(TE12L,F)

更新时间： 2024-09-26 14:48:43

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	150K
描述
TRANSISTOR NPN 50V 1A SC-62

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技术参数
数据手册

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2SC5810(TE12L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.53
Is Samacsys：	N	Base Number Matches：	1

2SC5810(TE12L,F) 数据手册

2SC5810

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5810

High-Speed Switching Applications

Unit: mm

DC-DC Converter Applications

Strobe Applications

•

High DC current gain: h = 400 to 1000 (I = 0.1 A)

Low collector-emitter saturation voltage: V

= 0.17 V (max)

CE (sat)

High-speed switching: t = 85 ns (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

100

CBO

CEX

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

1.0

JEDEC

JEITA

―

Pulse

2.0

SC-62

2-5K1A

Base current

0.1

2.0

TOSHIBA

Collector power

dissipation

(Note 1)

t = 10 s

1.0

Weight: 0.05 g (typ.)

Junction temperature

150

−55 to 150

°C

Storage temperature range

stg

Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm²)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-12-21

12 3 4 5

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