是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Not Recommended | 包装说明: | SSM, 2-2H1A, 3 PIN |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.43 | 最大集电极电流 (IC): | 0.4 A |
集电极-发射极最大电压: | 12 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 500 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 240 | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | NOT SPECIFIED | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 130 MHz | VCEsat-Max: | 0.25 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5376-B(TE85L) | TOSHIBA |
获取价格 |
2SC5376-B(TE85L) | |
2SC5376-B(TE85L,F) | TOSHIBA |
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TRANSISTOR,BJT,NPN,12V V(BR)CEO,400MA I(C),SOT-416 | |
2SC5376CT-A | TOSHIBA |
获取价格 |
TRANSISTOR 400 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR, CST3, 2-1J1A, 3 PIN, BIP Genera | |
2SC5376F | TOSHIBA |
获取价格 |
Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applicatio | |
2SC5376F_07 | TOSHIBA |
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Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications | |
2SC5376FA | ETC |
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TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 400MA I(C) | SOT-416VAR | |
2SC5376F-A | TOSHIBA |
获取价格 |
TRANSISTOR 400 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR, ESM, 2-2HA1A, 3 PIN, BIP Genera | |
2SC5376FB | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 400MA I(C) | SOT-416VAR | |
2SC5376F-B | TOSHIBA |
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暂无描述 | |
2SC5376FV | TOSHIBA |
获取价格 |
Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applicatio |