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2SC5108-Y,LF PDF预览

2SC5108-Y,LF

更新时间： 2024-11-24 13:04:19
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
6页 658K
描述
RF Small Signal Bipolar Transistor

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2SC5108-Y,LF 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：unknown风险等级：5.59
Base Number Matches：1

2SC5108-Y,LF 数据手册

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2SC5108  
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type  
2SC5108  
For VCO Application  
Unit: mm  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
20  
10  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Base current  
3
V
I
15  
mA  
mA  
mW  
°C  
°C  
B
Collector current  
I
30  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
125  
−55~125  
C
T
j
T
stg  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
―
―
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure  
rate, etc).  
TOSHIBA  
2-2H1A  
Weight: 2.4 mg (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 10 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
⎯
⎯
⎯
⎯
0.1  
0.1  
μA  
μA  
CBO  
CB  
EB  
E
I
= 1 V, I = 0  
C
EBO  
h
FE  
DC current gain  
V
= 5 V, I = 5 mA  
80  
⎯
240  
CE  
C
(Note 1)  
Transition frequency  
Insertion gain  
f
V
V
= 5 V, I = 5 mA  
4
6
⎯
⎯
GHz  
dB  
pF  
T
CE  
CE  
C
2
⎪S  
⎪
= 5 V, I = 5 mA, f = 1 GHz  
7
11  
21e  
C
Output capacitance  
C
⎯
⎯
⎯
0.7  
0.5  
5.5  
⎯
ob  
V
V
= 5 V, I = 0, f = 1 MHz  
(Note 2)  
CB  
CB  
E
Reverse transfer capacitance  
Collector-base time constant  
C
0.9  
10  
pF  
re  
C
rbb’  
= 5 V, I = 3 mA, f = 30 MHz  
ps  
c
C
･
Note 1:  
Note 2:  
h
classification O: 80~160, Y: 120~240  
FE  
C
is measured by 3 terminal method with capacitance bridge.  
re  
1
2007-11-01  
123456

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