生命周期: | Active | 零件包装代码: | SC-70 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.35 |
最大集电极电流 (IC): | 0.06 A | 基于收集器的最大容量: | 0.9 pF |
集电极-发射极最大电压: | 10 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 120 | 最高频带: | L BAND |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.1 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 6000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5110-Y(TE85L) | TOSHIBA |
获取价格 |
2SC5110-Y(TE85L) | |
2SC5110-Y(TE85L,F) | TOSHIBA |
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TRANSISTOR,BJT,NPN,10V V(BR)CEO,60MA I(C),SC-70 | |
2SC5110-YTE85L | TOSHIBA |
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TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
2SC5110-YTE85R | TOSHIBA |
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TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
2SC5111 | TOSHIBA |
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NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION) | |
2SC5111F-O | TOSHIBA |
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暂无描述 | |
2SC5111FT | TOSHIBA |
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NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION) | |
2SC5111FTO | ETC |
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TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | SOT-416 | |
2SC5111FT-O | TOSHIBA |
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TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP RF Small Signal | |
2SC5111FTY | ETC |
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TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | SOT-416 |