Datasheet > 2SC5110-Y(TE85L,F)

2SC5110-Y(TE85L,F)

更新时间： 2024-11-25 08:59:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	339K
描述
TRANSISTOR,BJT,NPN,10V V(BR)CEO,60MA I(C),SC-70

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2SC5110

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

2SC5110

For VCO Application

Unit: mm

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Base current

°C

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

100

125

stg

−55 to 125

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

―

JEITA

SC-70

2-2E1A

TOSHIBA

Weight: 6 mg (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

2010-04-14

12 3 4 5 6

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