生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.28 | 最大集电极电流 (IC): | 0.06 A |
基于收集器的最大容量: | 0.9 pF | 集电极-发射极最大电压: | 10 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 120 |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.1 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 6000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5111-Y(TE85L) | TOSHIBA |
获取价格 |
2SC5111-Y(TE85L) |
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2SC5111-Y(TE85L,F) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,NPN,10V V(BR)CEO,60MA I(C),SOT-416 |
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2SC5112 | ROHM |
获取价格 |
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE |
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2SC5113 | ROHM |
获取价格 |
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE |
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2SC5113C7 | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
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2SC5114 | ETC |
获取价格 |
TRANSISTORS |
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2SC5115 | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, |
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2SC5115TL | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, |
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2SC5115TR | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, |
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2SC5116 | ROHM |
获取价格 |
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE |
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