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2SC5122_06 PDF预览

2SC5122_06

更新时间: 2024-01-18 05:56:17
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
4页 113K
描述
Silicon NPN Triple Diffused Type

2SC5122_06 数据手册

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2SC5122  
TOSHIBA Transistor Silicon NPN Triple Diffused Type  
2SC5122  
High-Voltage switching Applications  
Unit: mm  
High breakdown voltage: V  
= 400 V  
CEO  
Low saturation voltage: V  
= 0.4 V (typ.)  
CE (sat)  
(I = 20 mA, I = 0.5 mA)  
C
B
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
400  
400  
V
V
V
Collector-emitter voltage  
Emitter-base voltage  
7
DC  
I
50  
C
Collector current  
mA  
Pulse  
I
100  
CP  
Base current  
I
25  
mA  
mW  
°C  
B
Collector power dissipation  
Junction temperature  
P
900  
C
T
150  
JEDEC  
JEITA  
TO-92MOD  
j
Storage temperature range  
T
stg  
55 to 150  
°C  
TOSHIBA  
2-5J1A  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
Weight: 0.36 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2006-11-10  

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