Datasheet > 2SC5129_2015

2SC5129_2015

更新时间： 2024-11-28 01:18:51

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	47K
描述
Silicon Power Transistors

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中文翻译

获取价格

数据手册

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2SC5129_2015 数据手册

Product Specification

www.jmnic.com

Silicon Power Transistors

2SC5129

DESCRIPTION

·With TO-3P(H)IS package

·High speed

·High voltage

·Low saturation voltage

APPLICATIONS

·Horizontal deflection output for high

resolution display,colorTV

·High speed switching applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-3P(H)IS) and symbol

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

1500

600

UNIT

Open base

Open collector

I_CM

Collector current-Peak

Base current

I_B

P_T

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-55~150

T_stg

JMnic

12 3

中文翻译

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