Datasheet > 2SC5127

2SC5127

更新时间： 2024-11-26 22:52:43

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	62K
描述
Silicon NPN triple diffusion planar type

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2SC5127 数据手册

Power Transistors

2SC5127, 2SC5127A

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Unit: mm

4.6±0.2

Features

High-speed switching

■

9.9±0.3

2.9±0.2

●

φ3.2±0.1

●

High collector to base voltage V_CBO

●

Wide area of safe operation (ASO)

●

Full-pack package with outstanding insulation, which can be in-

stalled to the heat sink with one screw

2.6±0.1

0.7±0.1

1.2±0.15

Absolute Maximum Ratings (T =25˚C)

1.45±0.15

■

Parameter

Symbol

Ratings

Unit

0.75±0.1

Collector to

2SC5127

2SC5127A

2SC5127

800

2.54±0.2

5.08±0.4

V_CBO

base voltage

Collector to

900

800

2 3

7°

V_CES

emitter voltage 2SC5127A

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

900

1:Base

2:Collector

3:Emitter

V_CEO

V_EBO

I_CP

500

TO–220E Full Pack Package

3.0

I_C

1.5

Base current

I_B

0.5

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Collector cutoff

Symbol

I_CBO

Conditions

min

typ

max

100

Unit

2SC5127

V_CB= 800V, I_E= 0

µA

current

2SC5127A

V_CB= 900V, I_E= 0

Emitter cutoff current

I_EBO

V_CEO

h_FE1

h_FE2

V_EB= 5V, I_C= 0

µA

Collector to emitter voltage

I_C= 10mA, I_B= 0

500

V_CE= 5V, I_C= 0.1A

V_CE= 5V, I_C= 0.6A

I_C= 0.6A, I_B= 0.17A

V_CE= 10V, I_C= 0.1A, f = 1MHz

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

1.0

1.5

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

MHz

µs

1.0

3.0

0.3

I_C= 0.6A, I_B1= 0.17A, I_B2= – 0.34A,

V_CC= 200V

µs

12 3

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