Datasheet > 2SC5110_07

2SC5110_07

更新时间： 2024-09-28 04:26:07

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	675K
描述
Silicon NPN Epitaxial Planar Type For VCO Application

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中文翻译

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数据手册

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2SC5110_07 数据手册

2SC5110

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

2SC5110

For VCO Application

Unit: mm

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Base current

°C

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

100

125

−55~125

stg

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

SC-70

2-2E1A

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

TOSHIBA

Weight: 0.006 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= 10 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

⎯

0.1

μA

CBO

= 1 V, I = 0

EBO

DC current gain

= 5 V, I = 5 mA

⎯

240

(Note 1)

Transition frequency

Insertion gain

= 5 V, I = 5 mA

⎯

GHz

⎪S

⎪

= 5 V, I = 5 mA, f = 1 GHz

0.9

0.7

21e

Output capacitance

⎯

= 5 V, I = 0, f = 1 MHz

(Note 2)

Reverse transfer capacitance

Collector-base time constant

1.1

rbb’

= 5 V, I = 3 mA, f = 30 MHz

･

Note 1:

Note 2:

classification O: 80~160, Y: 120~240

is measured by 3 terminal method with capacitance bridge.

2007-11-01

12 3 4 5 6

中文翻译

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2SC5110-O	TOSHIBA	获取价格	TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP RF Small
2SC5110-O(TE85L)	TOSHIBA	获取价格	2SC5110-O(TE85L)
2SC5110-O(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,10V V(BR)CEO,60MA I(C),SC-70
2SC5110-OTE85L	TOSHIBA	获取价格	TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
2SC5110-OTE85R	TOSHIBA	获取价格	TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
2SC5110TE85R	TOSHIBA	获取价格	TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
2SC5110Y	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 10V V(BR)CEO \| 60MA I(C) \| SC-70
2SC5110-Y	TOSHIBA	获取价格	TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP RF Small
2SC5110-Y(TE85L)	TOSHIBA	获取价格	2SC5110-Y(TE85L)