生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.73 |
最大集电极电流 (IC): | 0.06 A | 基于收集器的最大容量: | 0.9 pF |
集电极-发射极最大电压: | 10 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 80 | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 6000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5110Y | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | SC-70 | |
2SC5110-Y | TOSHIBA |
获取价格 |
TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP RF Small | |
2SC5110-Y(TE85L) | TOSHIBA |
获取价格 |
2SC5110-Y(TE85L) | |
2SC5110-Y(TE85L,F) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,NPN,10V V(BR)CEO,60MA I(C),SC-70 | |
2SC5110-YTE85L | TOSHIBA |
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TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
2SC5110-YTE85R | TOSHIBA |
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TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
2SC5111 | TOSHIBA |
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NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION) | |
2SC5111F-O | TOSHIBA |
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暂无描述 | |
2SC5111FT | TOSHIBA |
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NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION) | |
2SC5111FTO | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | SOT-416 |