Datasheet > 2SC5075_06

2SC5075_06

更新时间： 2024-11-27 04:26:07

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关高压
页数	文件大小	规格书
5页	136K
描述
Silicon NPN Triple Diffused Type Switching Regulator and High-Voltage Switching Applications

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2SC5075_06 数据手册

2SC5075

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC5075

Switching Regulator and High-Voltage Switching

Industrial Applications

Unit: mm

Applications

High-Speed DC-DC Converter Applications

•

High-speed switching: t = 1.0 μs (max), t = 1.0 μs (max)

High breakdown voltage: V

= 400 V

CEO

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

500

Collector-emitter voltage

Emitter-base voltage

Collector current

400

0.5

Base current

Collector power dissipation

Junction temperature

Storage temperature range

1.3

°C

JEDEC

JEITA

―

150

stg

−55 to 150

TOSHIBA

2-8M1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 0.55 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-10

12 3 4 5

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