是否Rohs认证: | 不符合 | 生命周期: | Lifetime Buy |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.44 |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 120 MHz | VCEsat-Max: | 0.4 V |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2SC5175 | TOSHIBA |
类似代替 |
NPN EPITAXIAL TYPE (HIHG CURRENT SWITCHING APPLICATIONS) | |
FZT851TA | DIODES |
功能相似 |
60V NPN MEDIUM POWER TRANSISTOR IN SOT223 | |
STN851 | STMICROELECTRONICS |
功能相似 |
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5076_04 | TOSHIBA |
获取价格 |
High-Current Switching Applications. | |
2SC5076O | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-221 | |
2SC5076-O | TOSHIBA |
获取价格 |
TRANSISTOR 5 A, 50 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-8M1A, 3 PIN, BIP General Pur | |
2SC5076Y | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-221 | |
2SC5076-Y | TOSHIBA |
获取价格 |
TRANSISTOR 5 A, 50 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-8M1A, 3 PIN, BIP General Pur | |
2SC5077 | PANASONIC |
获取价格 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) | |
2SC5077A | PANASONIC |
获取价格 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) | |
2SC5078 | HITACHI |
获取价格 |
Silicon NPN Epitaxial | |
2SC5078ZC | HITACHI |
获取价格 |
暂无描述 | |
2SC5078ZC-TL | HITACHI |
获取价格 |
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili |