Datasheet > 2SC5076_04

2SC5076_04

更新时间： 2024-09-27 07:31:07

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	149K
描述
High-Current Switching Applications.

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2SC5076_04 数据手册

2SC5076

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC5076

High-Current Switching Applications.

Unit: mm

•

Low collector saturation voltage: V = 0.4 V (max) (I = 3 A)

CE (sat) C

High-speed switching: t

= 1.0 µs (typ.)

stg

Complementary to 2SA1905

Maximum Ratings

(Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CBO

CEO

EBO

Base current

1.3

Collector power dissipation

Junction temperature

°C

150

JEDEC

JEITA

―

Storage temperature range

stg

−55 to 150

TOSHIBA

2-8M1A

Weight: 0.55 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= 50 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

―

µA

CBO

Emitter cut-off current

= 5 V, I = 0

EBO

Collector-emitter breakdown voltage

= 10 mA, I = 0

―

(BR) CEO

FE (1)

= 1 V, I = 1 A

―

240

DC current gain

(Note)

= 1 V, I = 3 A

―

0.2

0.9

120

―

0.4

1.2

―

FE (2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

= 3 A, I = 0.15 A

CE (sat)

BE (sat)

= 3 A, I = 0.15 A

= 4 V, I = 1 A

MHz

Collector output capacitance

= 10 V, I = 0, f = 1 MHz

―

Turn-on time

―

0.1

1.0

0.1

―

Output

20 µs

Input

Switching time

µs

Storage time

Fall time

stg

= 30 V

= −I = 0.15 A, duty cycle ≤ 1%

Note: h

FE (1)

classification O: 70 to 140, Y: 120 to 240

2004-07-07

12 3 4 5

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与2SC5076_04相关器件

型号	品牌	获取价格	描述	数据表
2SC5076O	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 5A I(C) \| TO-221
2SC5076-O	TOSHIBA	获取价格	TRANSISTOR 5 A, 50 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-8M1A, 3 PIN, BIP General Pur
2SC5076Y	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 5A I(C) \| TO-221
2SC5076-Y	TOSHIBA	获取价格	TRANSISTOR 5 A, 50 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-8M1A, 3 PIN, BIP General Pur
2SC5077	PANASONIC	获取价格	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
2SC5077A	PANASONIC	获取价格	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
2SC5078	HITACHI	获取价格	Silicon NPN Epitaxial
2SC5078ZC	HITACHI	获取价格	暂无描述
2SC5078ZC-TL	HITACHI	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5078ZC-UL	HITACHI	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili