生命周期: | Not Recommended | 包装说明: | MPAK-4 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.15 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 0.05 A |
基于收集器的最大容量: | 0.75 pF | 集电极-发射极最大电压: | 8 V |
配置: | SINGLE | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 13500 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5080ZD-TR | RENESAS |
获取价格 |
暂无描述 | |
2SC5080ZD-UL | HITACHI |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC5081 | RENESAS |
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Silicon NPN Epitaxial | |
2SC5081 | HITACHI |
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Silicon NPN Epitaxial | |
2SC5081ZD | HITACHI |
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Si, NPN, RF SMALL SIGNAL TRANSISTOR | |
2SC5081ZD-TL | HITACHI |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC5081ZD-TL-E | RENESAS |
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Silicon NPN Epitaxial | |
2SC5081ZD-UR | HITACHI |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC5082M | ROHM |
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Transistor | |
2SC5082M/L | ROHM |
获取价格 |
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili |