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2SC5080ZD-TL-E PDF预览

2SC5080ZD-TL-E

更新时间: 2024-11-27 06:19:55
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
8页 198K
描述
Silicon NPN Epitaxial

2SC5080ZD-TL-E 技术参数

生命周期:Not Recommended包装说明:MPAK-4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.15Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):0.05 A
基于收集器的最大容量:0.75 pF集电极-发射极最大电压:8 V
配置:SINGLE最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):13500 MHzBase Number Matches:1

2SC5080ZD-TL-E 数据手册

 浏览型号2SC5080ZD-TL-E的Datasheet PDF文件第2页浏览型号2SC5080ZD-TL-E的Datasheet PDF文件第3页浏览型号2SC5080ZD-TL-E的Datasheet PDF文件第4页浏览型号2SC5080ZD-TL-E的Datasheet PDF文件第5页浏览型号2SC5080ZD-TL-E的Datasheet PDF文件第6页浏览型号2SC5080ZD-TL-E的Datasheet PDF文件第7页 
2SC5080  
Silicon NPN Epitaxial  
REJ03G0742-0300  
(Previous ADE-208-1132A)  
Rev.3.00  
Aug.10.2005  
Application  
VHF / UHF wide band amplifier  
Features  
High gain bandwidth product  
fT = 13.5 GHz Typ  
High gain, low noise figure  
PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz  
Outline  
RENESAS Package code: PLSP0004ZA-A  
(Package name: MPAK-4)  
2
1. Collector  
2. Emitter  
3. Base  
3
4. Emitter  
Note:  
Marking is “ZD–”.  
Attention: This device is very see.  
It is recommended hen handling this transistor.  
Absolute Maxi
(Ta = 25°C)  
Item  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
15  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
8
V
1.5  
V
50  
mA  
mW  
°C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
150  
Tj  
Tstg  
–55 to +150  
°C  
Rev.3.00 Aug 10, 2005 page 1 of 7  

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