Datasheet > 2SC5081ZD-TL-E

2SC5081ZD-TL-E

更新时间： 2024-02-06 08:33:27

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
6页	162K
描述
Silicon NPN Epitaxial

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中文翻译

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技术参数
数据手册

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2SC5081ZD-TL-E 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PDSO-G4
针数：	4	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.75
风险等级：	5.31	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	0.05 A	基于收集器的最大容量：	0.75 pF
集电极-发射极最大电压：	8 V	配置：	SINGLE
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-PDSO-G4
元件数量：	1	端子数量：	4
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	13500 MHz	Base Number Matches：	1

2SC5081ZD-TL-E 数据手册

2SC5081

Silicon NPN Epitaxial

REJ03G0743-0300

(Previous ADE-208-1133A)

Rev.3.00

Aug.10.2005

Application

VHF / UHF wide band amplifier

Features

•

High gain bandwidth product

f_T= 13.5 GHz Typ

•

High gain, low noise figure

PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz

Outline

RENESAS Package code: PTSP0004ZA-A

(Package name: CMPAK-4)

1. Collector

2. Emitter

3. Base

4. Emitter

Note:

Marking is “ZD–”.

Attention: This device is very sensitive to electro static discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

1.5

°C

Collector power dissipation

Junction temperature

Storage temperature

P_C

100

150

Tstg

–55 to +150

°C

Rev.3.00 Aug 10, 2005 page 1 of 5

12 3 4 5 6

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