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2SC5082M/N PDF预览

2SC5082M/N

更新时间: 2024-02-21 17:28:53
品牌 Logo 应用领域
罗姆 - ROHM 放大器晶体管
页数 文件大小 规格书
2页 105K
描述
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

2SC5082M/N 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
最大集电极电流 (IC):0.05 A基于收集器的最大容量:1.6 pF
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):82最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):650 MHz

2SC5082M/N 数据手册

 浏览型号2SC5082M/N的Datasheet PDF文件第2页 

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