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2SC5007(NE68119)

更新时间: 2024-11-14 23:20:23
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10页 55K
描述
Discrete

2SC5007(NE68119) 数据手册

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DATA SHEET  
SILICON TRANSISTOR  
2SC5007  
NPN SILICON EPITAXIAL TRANSISTOR  
3 PINS ULTRA SUPER MINI MOLD  
DESCRIPTION  
The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from  
VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range  
and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which  
is an NEC proprietary fabrication technique.  
FEATURES  
PACKAGE DIMENSIONS  
Low Voltage Use.  
in millimeters  
High fT  
Low Cre  
Low NF  
: 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)  
: 0.45 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)  
: 1.4 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)  
1.6 ± 0.1  
0.8 ± 0.1  
High |S21e|2: 12 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)  
2
1
Ultra Super Mini Mold Package.  
3
ORDERING INFORMATION  
PART  
QUANTITY  
NUMBER  
PACKING STYLE  
2SC5007  
50 pcs./Unit  
3 kpcs./Reel  
Embossed tape 8 mm wide.  
Pin3 (Collector) face to perforation side  
of the tape.  
2SC5007-T1  
* PleasecontactwithresponsibleNECperson, ifyourequireevaluation  
1. Emitter  
2. Base  
sample. Unit sample quantity shall be 50 pcs.  
3. Collector  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
20  
V
V
10  
1.5  
V
65  
mA  
mW  
˚ C  
˚ C  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
125  
Tj  
150  
Tstg  
–65 to +150  
Document No. P10386EJ2V0DS00 (2nd edition)  
(Previous No. TD-2400)  
Date Published July 1995 P  
Printed in Japan  
1993  
©

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