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2SC4926YD-TL-E PDF预览

2SC4926YD-TL-E

更新时间: 2024-11-06 06:26:43
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号双极晶体管射频小信号双极晶体管光电二极管
页数 文件大小 规格书
8页 98K
描述
Silicon NPN Epitaxial

2SC4926YD-TL-E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:MPAK
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.13
Is Samacsys:NBase Number Matches:1

2SC4926YD-TL-E 数据手册

 浏览型号2SC4926YD-TL-E的Datasheet PDF文件第2页浏览型号2SC4926YD-TL-E的Datasheet PDF文件第3页浏览型号2SC4926YD-TL-E的Datasheet PDF文件第4页浏览型号2SC4926YD-TL-E的Datasheet PDF文件第5页浏览型号2SC4926YD-TL-E的Datasheet PDF文件第6页浏览型号2SC4926YD-TL-E的Datasheet PDF文件第7页 
2SC4926  
Silicon NPN Epitaxial  
REJ03G0735-0300  
(Previous ADE-208-1128A)  
Rev.3.00  
Aug.10.2005  
Application  
VHF / UHF wide band amplifier  
Features  
High gain bandwidth product  
fT = 11 GHz Typ  
High gain, low noise figure  
PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz  
Outline  
RENESAS Package code: PLSP0004ZA-A  
(Package name: MPAK-4)  
2
1. Collector  
2. Emitter  
3. Base  
3
1
4. Emitter  
4
Note:  
Marking is “YD–”.  
Attention: This is electrostatic sensitive device.  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
15  
Unit  
V
8
V
1.5  
V
50  
mA  
mW  
°C  
Collector power dissipation  
Junction temperature  
PC  
150  
150  
Tj  
Storage temperature  
Tstg  
–55 to +150  
°C  
Rev.3.00 Aug 10, 2005 page 1 of 7  

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