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2SC4926YD-TR PDF预览

2SC4926YD-TR

更新时间: 2024-11-06 12:58:23
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
8页 98K
描述
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MPAK-4

2SC4926YD-TR 技术参数

生命周期:Obsolete包装说明:MPAK-4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.15外壳连接:COLLECTOR
最大集电极电流 (IC):0.05 A基于收集器的最大容量:1.1 pF
集电极-发射极最大电压:8 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):11000 MHz
Base Number Matches:1

2SC4926YD-TR 数据手册

 浏览型号2SC4926YD-TR的Datasheet PDF文件第2页浏览型号2SC4926YD-TR的Datasheet PDF文件第3页浏览型号2SC4926YD-TR的Datasheet PDF文件第4页浏览型号2SC4926YD-TR的Datasheet PDF文件第5页浏览型号2SC4926YD-TR的Datasheet PDF文件第6页浏览型号2SC4926YD-TR的Datasheet PDF文件第7页 
2SC4926  
Silicon NPN Epitaxial  
REJ03G0735-0300  
(Previous ADE-208-1128A)  
Rev.3.00  
Aug.10.2005  
Application  
VHF / UHF wide band amplifier  
Features  
High gain bandwidth product  
fT = 11 GHz Typ  
High gain, low noise figure  
PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz  
Outline  
RENESAS Package code: PLSP0004ZA-A  
(Package name: MPAK-4)  
2
1. Collector  
2. Emitter  
3. Base  
3
1
4. Emitter  
4
Note:  
Marking is “YD–”.  
Attention: This is electrostatic sensitive device.  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
15  
Unit  
V
8
V
1.5  
V
50  
mA  
mW  
°C  
Collector power dissipation  
Junction temperature  
PC  
150  
150  
Tj  
Storage temperature  
Tstg  
–55 to +150  
°C  
Rev.3.00 Aug 10, 2005 page 1 of 7  

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