Datasheet > 2SC4931B3

2SC4931B3

更新时间： 2024-09-15 23:20:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
4页	125K
描述
TRANSISTOR \| BJT \| NPN \| 8V V(BR)CEO \| 50MA I(C) \| TO-236VAR

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2SC4931B3 数据手册

Ordering number:EN5295A

NPN Epitaxial Planar Silicon Transistor

2SC4931

VHF to UHF Wide-Band

Low-Noise Amplifier Applications

Features

Package Dimensions

unit:mm

· Low noise : NF=1.2dB typ (f=1GHz).

· High gain : S21e =13dB typ (f=1GHz).

· High cutoff frequency : f =9.0GHz typ.

· Very small-sized package permitting 2SC4931-

applied sets to be made small and slim.

2106A

[2SC4931]

0.75

0.3

0.6

0 to 0.1

0.2

0.1

0.5

1.6

1 : Base

2 : Emitter

3 : Collector

SANYO : SMCP

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

1.5

EBO

˚C

Collector Dissipation

Junction Temperature

Storage Temperature

100

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

1.0

Collector Cutoff Current

=10V, I =0

µA

CBO

Emitter Cutoff Current

DC Current Gain

=1V, I =0

EBO

=5V, I =15mA

60*

270*

Gain-Bandwidth Product

Output Capacitance

Forward Transfer Gain

Noise Figure

9.0

GHz

=10V, f=1MHz

Cob

| S21e |²

0.55

1.2

2.5

=5V, I =15mA, f=1GHz

=5V, I =5mA, f=1GHz

1.2

* : The 2SC4931 is classified by 15mA h as follows :

Marking

135 to 270

60 to 120

90 to 180

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

12599HA (KT)/40196TS (KOTO) TA-0210 No.5295–1/4

12 3 4

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与2SC4931B3相关器件

型号	品牌	获取价格	描述	数据表
2SC4934	HITACHI	获取价格	Silicon NPN Epitaxial
2SC4934D	HITACHI	获取价格	Silicon NPN Epitaxial
2SC4934E	HITACHI	获取价格	Silicon NPN Epitaxial
2SC4935	TOSHIBA	获取价格	NPN EPITAXIAL TYPE (POWER AMPLIFIER APPLICATIONS)
2SC4935_04	TOSHIBA	获取价格	Power Amplifier Applications
2SC4935O	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 3A I(C) \| TO-220AB
2SC4935-O	TOSHIBA	获取价格	TRANSISTOR 3 A, 50 V, NPN, Si, POWER TRANSISTOR, SC-67, 3 PIN, BIP General Purpose Power
2SC4935Y	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 3A I(C) \| TO-220AB
2SC4937	ROHM	获取价格	Triple Diffused Planar NPN Silicon Transistor Swiching Regulator, High Speed DC-DC Convert
2SC4937/A	ROHM	获取价格	Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,

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