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2SC4934D PDF预览

2SC4934D

更新时间: 2024-11-09 06:19:07
品牌 Logo 应用领域
日立 - HITACHI /
页数 文件大小 规格书
3页 15K
描述
Silicon NPN Epitaxial

2SC4934D 数据手册

 浏览型号2SC4934D的Datasheet PDF文件第2页浏览型号2SC4934D的Datasheet PDF文件第3页 
2SC4934  
Silicon NPN Epitaxial  
Application  
TO–126FM  
High voltage amplifier  
Ordering Information  
1
2
3
1. Emitter  
2. Collector  
3. Base  
h
FE  
————————————————————  
2SC4934D  
250 to 500  
————————————————————  
2SC4934E  
400 to 800  
————————————————————  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Rating  
Unit  
———————————————————————————————————————————  
Collector to base voltage  
V
120  
V
CBO  
———————————————————————————————————————————  
Collector to emitter voltage  
V
120  
V
CEO  
———————————————————————————————————————————  
Emitter to base voltage  
V
5
V
EBO  
———————————————————————————————————————————  
Collector current  
I
0.2  
A
C
———————————————————————————————————————————  
Collector power dissipation  
P
1.5  
W
C
———————————————————————————————————————————  
*1  
Collector power dissipation  
P
8
W
C
———————————————————————————————————————————  
Junction temperature  
T
150  
°C  
j
———————————————————————————————————————————  
Storage temperature  
Tstg  
–55 to +150  
°C  
———————————————————————————————————————————  
Note: 1. Value at TC = 25°C.  

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