生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最大集电极电流 (IC): | 0.2 A | 配置: | SINGLE |
最小直流电流增益 (hFE): | 56 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 250 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC4702 | RENESAS |
获取价格 |
Silicon NPN Epitaxial | |
2SC4702 | KEXIN |
获取价格 |
Silicon NPN Epitaxial | |
2SC4702 | HITACHI |
获取价格 |
Silicon NPN Epitaxial | |
2SC4702 | TYSEMI |
获取价格 |
High breakdown voltage VCEO = 300 V Small Cob Cob = 1.5 pF Typ. | |
2SC4702_11 | RENESAS |
获取价格 |
Silicon NPN Epitaxial | |
2SC4702XV | HITACHI |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon | |
2SC4702XV-01 | HITACHI |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, MPAK- | |
2SC4702XV-TL | HITACHI |
获取价格 |
暂无描述 | |
2SC4702XV-TL | RENESAS |
获取价格 |
50mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR, MPAK-3 | |
2SC4702XV-TR | HITACHI |
获取价格 |
50mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR, MPAK-3 |