Datasheet > 2SC4621

2SC4621

更新时间： 2024-09-14 23:20:19

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数据手册

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2SC4621 数据手册

Power Transistors

2SC4621

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Unit: mm

15.0±0.3

11.0±0.2

5.0±0.2

Features

High-speed switching

3.2

■

●

High collector to base voltage V_CBO

Wide area of safe operation (ASO)

Full-pack package which can be installed to the heat sink with

one screw

φ3.2±0.1

2.0±0.2

●

2.0±0.1

0.6±0.2

1.1±0.1

Absolute Maximum Ratings (T =25˚C)

■

5.45±0.3

Parameter

Symbol

V_CBO

V_CES

V_CEO

V_EBO

I_CP

Ratings

Unit

10.9±0.5

Collector to base voltage

500

Collector to emitter voltage

400

1:Base

2:Collector

3:Emitter

Emitter to base voltage

Peak collector current

Collector current

TOP–3 Full Pack Package(a)

I_C

Base current

I_B

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

3.0

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

100

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= 500V, I_E= 0

V_EB= 5V, I_C= 0

I_EBO

V_CEO

h_FE1

h_FE2

Collector to emitter voltage

I_C= 10mA, I_B= 0

400

V_CE= 5V, I_C= 0.1A

Forward current transfer ratio

_CE= 5V, I_C= 3A

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 3A, I_B= 0.6A

1.5

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

_CE= 10V, I_C= 0.5A, f = 10MHz

MHz

µs

0.7

I_C= 3A, I_B1= 0.6A, I_B2= –1.2A,

V_CC= 150V

µs

0.3

µs

12 3

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与2SC4621相关器件

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2SC4622	ISC	获取价格	isc Silicon NPN Power Transistor
2SC4622	NJSEMI	获取价格	TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING
2SC4623	SANYO	获取价格	Very High-Definition CRT Display, Video Output Applications
2SC4623C	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 250V V(BR)CEO \| 300MA I(C) \| TO-126VAR
2SC4623D	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 250V V(BR)CEO \| 300MA I(C) \| TO-126VAR
2SC4623E	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 250V V(BR)CEO \| 300MA I(C) \| TO-126VAR
2SC4624	MITSUBISHI	获取价格	NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2SC4626	PANASONIC	获取价格	Silicon NPN epitaxial planer type(For high-frequency amplification)
2SC4626B	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 30MA I(C) \| SC-75
2SC4626C	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 30MA I(C) \| SC-75