2SC4627J-C

更新时间： 2024-01-03 07:36:42

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松下 - PANASONIC		/
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2SC4627J-C 数据手册

Transistor

2SC4627

Silicon NPN epitaxial planer type

For high-frequency amplification

Unit: mm

1.6±0.15

0.8±0.1

0.4

Features

■

●

Optimum for RF amplification of FM/AM radios.

High transition frequency f_T.

●

SS-Mini type package, allowing downsizing of the equipment

and automatic insertion through the tape packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

0.2±0.1

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

1:Base

2:Emitter

3:Collector

EIAJ:SC–75

SS–Mini Type Package

˚C

Collector power dissipation

Junction temperature

Storage temperature

P_C

125

T_j

125

Marking symbol : U

T_stg

–55 ~ +125

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

V_CBO

Conditions

min

typ

max

260

Unit

Collector to base voltage

Emitter to base voltage

Forward current transfer ratio

Base to emitter voltage

Transition frequency

I_C= 10µA, I_E= 0

V_EBO

I_E= 10µA, I_C= 0

h_FE

V_CB= 6V, I_E= –1mA

V_BE

f_T

V_CB= 6V, I_E= –1mA

0.72

650

0.8

MHz

V_CB= 6V, I_E= –1mA, f = 200MHz

V_CB= 6V, I_E= –1mA, f = 10.7MHz

V_CB= 6V, I_E= –1mA, f = 100MHz

450

Common emitter reverse transfer capacitance C_re

Power gain

Noise figure

3.3

^*h_FERank classification

Rank

h_FE

100 ~ 260

40 ~ 110

65 ~ 160

Marking Symbol

12 3

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