Datasheet > 2SC4505_07

2SC4505_07

更新时间： 2024-09-20 12:53:55

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	73K
描述
Power Transistor (400V, 0.1A)

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中文翻译

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数据手册

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2SC4505_07 数据手册

2SC4505

Transistors

Power Transistor (400V, 0.1A)

2SC4505

(Unit : mm)

Dimensions

zFeatures

1) High breakdown voltage. (BV^CEO= 400V)

2) Low saturation voltage,

MPT3

4.5

1.6

1.5

typically V^{CE (sat)}= 0.05V at IC / IB = 10mA / 1mA.

3) High switching speed, typically tf = 1.7µs at Ic =100mA.

4) Complements the 2SC4505 and the 2SA1759.

(1)

(2)

(3)

0.4

0.5

3.0

0.4

Packaging specifications and h_FE

1.5

(1)Base

Type

2SC4505

MPT3

(2)Collector

(3)Emitter

Package

hFE

Marking

Code

CE∗

T100

1000

Basic ordering unit (pieces)

∗

Denotes hFE

(Ta=25 C)

Absolute maximum ratings

Parameter

Symbol

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CBO

CEO

EBO

400

A (DC)

A (Pulse)

0.1

Collector current

0.2

∗

0.5

Collector power dissipation

∗

Junction temperature

Storage temperature

150

°C

Tstg

−55 to +150

∗

1 Single pulse, Pw=20ms, Duty=1/2

∗

2 When mounted on a 40 40 0.7mm ceramic board.

(Ta=25 C)

Electrical characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

BV^CBO

BVCEO

BVEBO

400

−

0.05

−

0.5

1.5

270

−

=50µA

=1mA

=50µA

CB=400V

EB=6V

CBO

−

µA

EBO

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current transfer ratio

Transition frequency

CE(sat)

=10mA/1mA

VBE(sat)

hFE

−

CE=10V , I

CB=10V , I

=10mA

MHz

µs

=−10mA , f=10MHz

=0A , f=1MHz

Output capacitance

Cob

Turn-on time

=−100mA R

B1=−IB2=10mA

CC~−150V

L=1.5kΩ

Storage time

stg

5.5

1.7

Fall time

−

Rev.D

1/3

12 3 4

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与2SC4505_07相关器件

型号	品牌	获取价格	描述	数据表
2SC4505N	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 100MA I(C) \| SC-62
2SC4505P	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 100MA I(C) \| SC-62
2SC4505Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 100MA I(C) \| SC-62
2SC4505T100/NP	ROHM	获取价格	0.1A, 400V, NPN, Si, POWER TRANSISTOR
2SC4505T100/PQ	ROHM	获取价格	Si, SMALL SIGNAL TRANSISTOR
2SC4505T100/Q	ROHM	获取价格	0.1A, 400V, NPN, Si, POWER TRANSISTOR
2SC4505T100N	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon,
2SC4505T100NP	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon,
2SC4505T100NQ	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon,
2SC4505T100P	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 100MA I(C) \| SOT-89