Datasheet > 2SC4373

2SC4373

更新时间： 2024-09-13 07:30:59

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
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描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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2SC4373 数据手册

2SC4373

SOT-89-3L

TRANSISTOR (NPN)

1. BASE

FEATURES

2. COLLECTOR

3. EMITTER

Small Flat Package

Large Current Capacity

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

120

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

120

Collector Current

800

℃/W

℃

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

500

R_θJA

T_j

250

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

120

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_C=1mA,I_E=0

I_C=10mA,I_B=0

I_E=1mA,I_C=0

V_CB=120V,I_E=0

0.1

240

µA

I_EBO

V_EB=5V,I_C=0

DC current gain

h_FE

V_CE=5V, I_C=100mA

I_C=500mA,I_B=50mA

V_CE=5V, I_C=500mA

V^CE=5V,I^C=500mA

V_CB=10V, I_E=0, f=1MHz

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

f_T

120

MHz

Transition frequency

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

RANK

RANGE

80–160

120–240

MARKING

JinYu

semiconductor

www.htsemi.com

中文翻译

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