SMD Type
Transistors
NPN Transistors
2SC4373
1.70 0.1
■ Features
● Collector Current Capability IC=800mA
● Collector Emitter Voltage VCEO=120V
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
120
Unit
V
VCBO
VCEO
VEBO
Collector - Emitter Voltage
Emitter - Base Voltage
120
5
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
I
C
800
mA
mW
℃/W
P
C
500
RθJA
250
T
J
150
℃
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= 1 mA, I = 0
Ic= 10 mA, I
= 1 mA, I
Min
120
120
5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
= 0
I
E
C
= 0
I
CBO
EBO
V
V
CB= 120 V , I
EB= 5V , I =0
E= 0
0.1
0.1
1
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=500 mA, I
B
=50mA
=50mA
V
C=500 mA, I
B
1.2
1
V
BE
V
V
V
V
CE= 5V, I
CE= 5V, I
C
= 500mA
= 100mA
DC current gain
hFE
C
80
240
30
Collector output capacitance
Transition frequency
C
ob
T
CB= 10V, I
E= 0,f=1MHz
pF
f
CE= 5V, I = 0.5 A
C
120
MHz
■ Classification of hfe
Type
Range
Marking
2SC4373-O
80-160
CO
2SC4373-Y
120-240
CY
1
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