2SC4374
BIPOLAR TRANSISTOR (NPN)
FEATURES
Complementary to 2SA1662
Low Collector-emitter saturation voltage
Surface Mount device
SOT-89
MECHANICAL DATA
Case: SOT-89
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.055 grams (approximate)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Value
80
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
80
V
Emitter-Base Voltage
5
V
Collector Current
400
mA
mW
°C/W
°C
Collector Power Dissipation
PC
500
RθJA
TJ
Thermal Resistance From Junction To Ambient
Junction Temperature
250
150
Storage Temperature
TSTG
-55 ~+150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Conditions
I =1mA I =0
V(BR)CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
80
80
5
V
V
,
E
C
V(BR)CEO
V(BR)EBO
ICBO
IC=10mA,IB=0
I =1mA I =0
V
,
E
C
0.1
0.1
240
uA
uA
VCB=80V, IE=0
Emitter cut-off current
VEB=5V, IC=0
IEBO
hFE1
70
50
VCE=2V, IC=50mA
VCE=2V, IC=200mA
IC=200mA,IB=20mA
IC=5mA,VCE=2V,
VCE=10V, IC=10mA
DC current gain
hFE2
Collector-emitter saturation voltage VCE(sat)
0.4
1
V
V
Base-emitter saturation voltage
Transition frequency
VBE
fT
0.55
100
10
MHz
pF
VCB=10V, IE=0, f=1
Collector output capacitance
Cob
MHz
CLASSIFICATION OF hFE
Rank
O
Y
Range
70-140
EO
120-240
EY
Marking
1 / 4
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