Datasheet > 2SC4375O

2SC4375O

更新时间： 2024-02-12 00:35:37

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2SC4375O 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SC4375O 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

2SC4375

TRANSISTOR (NPN)

1. BASE

FEATURES

2. COLLECTOR

Small Flat Package

Low Collector- Emitter Saturation Voltage

3. EMITTER

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

1.5

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

500

℃/W

℃

R_θJA

T_j

250

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_C=1mA,I_E=0

I_C=10mA,I_B=0

I_E=1mA,I_C=0

V_CB=30V,I_E=0

0.1

320

µA

I_EBO

V_EB=5V,I_C=0

DC current gain

h_FE

V_CE=2V, I_C=500mA

I_C=1.5A,I_B=30mA

V_CE=2V, I_C=500mA

VCE=2V,IC=500mA

V_CB=10V, I_E=0, f=1MHz

100

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

f_T

120

MHz

Transition frequency

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

RANK

RANGE

100–200

160–320

MARKING

A,Nov,2010

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