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2SC4209 PDF预览

2SC4209

更新时间: 2024-11-24 06:16:47
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描述
Silicon NPN Epitaxial

2SC4209 数据手册

  
SMD Type  
Transistors  
Silicon NPN Epitaxial  
2SC4209  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
1
2
+0.1  
0.95  
-0.1  
+0.05  
-0.01  
0.1  
+0.1  
1.9  
-0.1  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
80  
80  
V
5
300  
V
mA  
mA  
mW  
Base current  
IB  
60  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
200  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
Min  
Typ  
Max  
0.1  
Unit  
ìA  
ìA  
V
Collector cut-off current  
Emitter cut-off current  
VCB = 50 V, IE = 0  
VEB = 5 V, IC = 0  
IEBO  
0.1  
Collector-emitter breakdown voltage  
DC current gain  
V(BR)CEO IC = 5mA , IB = 0  
hFE VCE = 2 V, IC = 50 mA  
VCE (sat) IC = 200 mA, IB = 10 mA  
80  
70  
240  
0.5  
0.8  
Collector-emitter saturation voltage  
Base-emitter voltage  
V
V
VBE  
fT  
VCE = 2 V, IC = 5 mA  
0.55  
Transition frequency  
VCE = 10 V, IC = 10 mA  
VCB = 10 V, IE = 0, f = 1 MHz  
100  
10  
MHz  
pF  
Collector output capacitance  
Cob  
hFE Classification  
C
Marking  
Rank  
O
Y
hFE  
70 140  
120 240  
1
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High DC current gain: hFE = 100 320.Collector-base voltage VCBO 35 V