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2SC4210-O(TE85L) PDF预览

2SC4210-O(TE85L)

更新时间： 2024-02-02 00:10:56
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
3页 182K
描述
TRANSISTOR,BJT,NPN,30V V(BR)CEO,800MA I(C),SC-59

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2SC4210-O(TE85L) 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：,Reach Compliance Code：unknown
风险等级：5.69最大集电极电流 (IC)：0.8 A
配置：Single最小直流电流增益 (hFE)：100
最高工作温度：150 °C极性/信道类型：NPN
最大功率耗散 (Abs)：0.2 W子类别：Other Transistors
表面贴装：YESBase Number Matches：1

2SC4210-O(TE85L) 数据手册

 浏览型号2SC4210-O(TE85L)的Datasheet PDF文件第2页浏览型号2SC4210-O(TE85L)的Datasheet PDF文件第3页 
2SC4210  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC4210  
Audio Power Amplifier Applications  
Unit: mm  
•
•
High DC current gain: h  
= 100~320  
FE  
Complementary to 2SA1621  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
35  
30  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5
V
I
800  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
160  
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
200  
C
T
j
150  
T
stg  
−55~150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TO-236MOD  
SC-59  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
TOSHIBA  
2-3F1A  
Weight: 0.012 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 35 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
V
V
⎯
⎯
30  
⎯
⎯
⎯
0.1  
0.1  
⎯
μA  
μA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
= 5 V, I = 0  
C
EBO  
Collector-emitter breakdown voltage  
V
I = 10 mA, I = 0  
C B  
(BR) CEO  
h
h
FE (1)  
(Note)  
FE (2)  
V
V
= 1 V, I = 100 mA  
100  
⎯
320  
CE  
C
DC current gain  
= 1 V, I = 700 mA  
35  
⎯
⎯
⎯
⎯
0.5  
0.8  
⎯
CE  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= 500 mA, I = 20 mA  
V
V
CE (sat)  
C
B
V
V
V
V
= 1 V, I = 10 mA  
0.5  
⎯
⎯
BE  
CE  
CE  
CB  
C
Transition frequency  
f
= 5 V, I = 10 mA  
120  
13  
MHz  
pF  
T
C
Collector output capacitance  
C
= 10 V, I = 0, f = 1 MHz  
⎯
⎯
ob  
E
Note: h  
classification O: 100~200, Y: 160~320  
FE (1)  
Marking  
1
2007-11-01  
123

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2SC4210TE85L TOSHIBA

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 		TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
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 		TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
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 		TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-26MOD
2SC4210-Y(TE85L) TOSHIBA

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 		2SC4210-Y(TE85L)
2SC4210-Y(TE85L,F) TOSHIBA

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 		TRANSISTOR,BJT,NPN,30V V(BR)CEO,800MA I(C),SC-59
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 		TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma

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