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2SC4213-B PDF预览

2SC4213-B

更新时间: 2024-11-24 12:36:03
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号双极晶体管光电二极管
页数 文件大小 规格书
5页 281K
描述
For Muting and Switching Applications

2SC4213-B 技术参数

生命周期:Active零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.48
Is Samacsys:N最大集电极电流 (IC):0.3 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):350JESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):0.1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):30 MHz
Base Number Matches:1

2SC4213-B 数据手册

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2SC4213  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC4213  
For Muting and Switching Applications  
Unit: mm  
High emitter-base voltage: V  
= 25 V (min)  
EBO  
High reverse h : Reverse h  
= 150 (typ.) (V  
= 2 V, I = 4 mA)  
CE C  
FE  
FE  
Low on resistance: R  
= 1 (typ.) (I = 5 mA)  
B
ON  
High DC current gain: h  
Small package  
= 200~1200  
FE  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
20  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
25  
V
I
300  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
60  
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
C
JEDEC  
JEITA  
T
j
125  
SC-70  
2-2E1A  
T
stg  
55~125  
TOSHIBA  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
Weight: 0.006 g (typ.)  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Marking  
1
2007-11-01  

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