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2SC4215-OTE85L

更新时间： 2024-11-27 15:42:07
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
5页 250K
描述
TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

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2SC4215-OTE85L 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.07
Is Samacsys：N最大集电极电流 (IC)：0.02 A
集电极-发射极最大电压：30 V配置：SINGLE
最小直流电流增益 (hFE)：70最高频带：VERY HIGH FREQUENCY BAND
JESD-30 代码：R-PDSO-G3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：125 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：240极性/信道类型：NPN
最大功率耗散 (Abs)：0.1 W最小功率增益 (Gp)：17 dB
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：TIN LEAD
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：550 MHz
Base Number Matches：1

2SC4215-OTE85L 数据手册

 浏览型号2SC4215-OTE85L的Datasheet PDF文件第2页浏览型号2SC4215-OTE85L的Datasheet PDF文件第3页浏览型号2SC4215-OTE85L的Datasheet PDF文件第4页浏览型号2SC4215-OTE85L的Datasheet PDF文件第5页 
2SC4215  
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type  
2SC4215  
High Frequency Amplifier Applications  
Unit: mm  
FM, RF, MIX, IF Amplifier Applications  
•
•
Small reverse transfer capacitance: C = 0.55 pF (typ.)  
re  
Low noise figure: NF = 2dB (typ.) (f = 100 MHz)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
40  
30  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
4
V
I
20  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
4
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
125  
−55~125  
C
T
j
JEDEC  
JEITA  
―
T
stg  
SC-70  
2-2E1A  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
TOSHIBA  
Weight: 0.006 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 40 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
⎯
⎯
⎯
⎯
0.1  
0.5  
μA  
μA  
CBO  
CB  
EB  
E
I
= 4 V, I = 0  
C
EBO  
h
FE  
(Note)  
DC current gain  
V
= 6 V, I = 1 mA  
40  
⎯
200  
CE  
C
Reverse transfer capacitance  
Transition frequency  
Collector-base time constant  
Noise figure  
C
V
V
V
= 10 V, f = 1 MHz  
⎯
260  
⎯
0.55  
550  
⎯
⎯
⎯
pF  
MHz  
ps  
re  
CB  
CE  
CE  
f
= 6 V, I = 1 mA  
C
T
C
r
bb’  
= 6 V, I = −1 mA, f = 30 MHz  
25  
5.0  
⎯
c
E
･
NF  
⎯
2
dB  
V
= 6 V, I = −1 mA, f = 100 MHz,  
E
CC  
Figure 1  
Power gain  
G
17  
23  
dB  
pe  
Note: h classification R: 40~80, O: 70~140, Y: 100~200  
FE  
1
2007-11-01  
12345

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