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2SC4215-Y PDF预览

2SC4215-Y

更新时间: 2024-11-24 07:30:55
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
3页 271K
描述
NPN Silicon Epitaxial Transistors

2SC4215-Y 数据手册

 浏览型号2SC4215-Y的Datasheet PDF文件第2页浏览型号2SC4215-Y的Datasheet PDF文件第3页 
M C C  
2SC4215-R  
2SC4215-O  
2SC4215-Y  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Small reverse transfer capacitance: Cre= 0.55pF(typ.)  
Low Voise figure: NF=2dB (typ.) (f=100 MHz)  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
NPN Silicon  
Epitaxial Transistors  
·
·
Maximum Ratings  
Symbol  
VCEO  
VCBO  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Rating  
Unit  
V
V
30  
40  
4
SOT-323  
A
VEBO  
V
D
IC  
PC  
TJ, TSTG  
Collector Current  
Collector power dissipation  
Junction and Storage Temperature  
20  
100  
-55 to +150  
mA  
mW  
R
C
C
B
Electrical Characteristics @ 25R Unless Otherwise Specified  
Symbol  
E
Parameter  
Min  
Typ  
Max  
Units  
B
F
E
Collector -base breakdown voltage  
V(BR)CBO  
V(BR)CEO  
40  
V
(IC=100µA, IE= 0)  
Collector-emitter breakdown voltage  
(IC=1mA, IB= 0)  
30  
4
V
V
H
G
J
Emitter-base breakdown voltage  
V(BR)EBO  
ICBO  
IEBO  
hFE  
(IE=100µA, Ic= 0)  
K
Collector cut-off current  
(VCB=40V,IE=0)  
0.1  
0.5  
200  
25  
DIMENSIONS  
INCHES  
µA  
µA  
MM  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.079  
MAX  
.087  
.053  
.087  
MIN  
1.80  
1.15  
2.00  
MAX  
2.20  
1.35  
2.20  
NOTE  
Emitter cut-off current  
(VEB=4V, Ic= 0)  
DC Current Gain  
(VCE=6V,IC=1mA)  
.026 Nominal  
0.65Nominal  
1.20  
40  
.047  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.100  
1.00  
.250  
.40  
F
.012  
.000  
.035  
.004  
.012  
.30  
.000  
.90  
.100  
.30  
G
H
J
Collector-base time constant  
CC rbb  
ps  
pF  
(VCE=6V, I =1mA,f=30MHz)  
c
K
Reverse transfer capacitance  
(VCB=10V, f=1.0MHz)  
Cre  
0.55  
550  
Suggested Solder  
Pad Layout  
0.70  
Transition frequency  
(VCE=6V, Ic=1mA,)  
fT  
260  
MHz  
0.90  
h
FE CLASSIFICATION  
Rank  
Ramge  
Marking  
R
40~80  
QR  
O
Y
mm  
1.90  
70~140  
QO  
100~200  
QY  
0.65  
0.65  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

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