2SC4215-Y-TP-HF

更新时间： 2024-09-24 13:04:19

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
3页	271K
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数据手册

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2SC4215-Y-TP-HF 数据手册

M C C

2SC4215-R

2SC4215-O

2SC4215-Y

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

Small reverse transfer capacitance: Cre= 0.55pF(typ.)

Low Voise figure: NF=2dB (typ.) (f=100 MHz)

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

NPN Silicon

Epitaxial Transistors

Maximum Ratings

Symbol

V_CEO

V_CBO

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Rating

Unit

SOT-323

V_EBO

I_C

P_C

T_J,T_STG

Collector Current

Collector power dissipation

Junction and Storage Temperature

100

-55 to +150

Electrical Characteristics @ 25R Unless Otherwise Specified

Symbol

Parameter

Min

Typ

Max

Units

Collector -base breakdown voltage

V_(BR)CBO

V_(BR)CEO

(I_C=100µA, I_E= 0)

Collector-emitter breakdown voltage

(I_C=1mA, I_B= 0)

Emitter-base breakdown voltage

V_(BR)EBO

I_CBO

I_EBO

h_FE

(I_E=100µA, I_c= 0)

Collector cut-off current

(V_CB=40V,I_E=0)

0.1

0.5

200

DIMENSIONS

INCHES

µA

DIM

MIN

.071

.045

.079

MAX

.087

.053

.087

MIN

1.80

1.15

2.00

MAX

2.20

1.35

2.20

NOTE

Emitter cut-off current

(V_EB=4V, I_c= 0)

DC Current Gain

(V_CE=6V,I_C=1mA)

.026 Nominal

0.65Nominal

1.20

.047

.055

.016

.004

.039

.010

.016

1.40

.40

.100

1.00

.250

.40

.012

.000

.035

.004

.012

.30

.000

.90

.100

.30

Collector-base time constant

C_{C rbb}

(V_CE=6V, I =1mA,f=30MHz)

Reverse transfer capacitance

(V_CB=10V, f=1.0MHz)

C_re

0.55

550

Suggested Solder

Pad Layout

0.70

Transition frequency

(V_CE=6V, Ic=1mA,)

f_T

260

MHz

0.90

FE CLASSIFICATION

Rank

Ramge

Marking

40~80

1.90

70~140

100~200

0.65

www.mccsemi.com

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Revision: A

2011/01/01

12 3

中文翻译

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