Datasheet > 2SC4215

2SC4215

更新时间： 2024-11-28 14:53:11

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
3页	799K
描述
双极型晶体管

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技术参数
数据手册

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2SC4215 技术参数

极性：	NPN	Collector-emitter breakdown voltage：	30
Collector Current - Continuous：	0.02	DC current gain - Min：	40
DC current gain - Max：	200	Transition frequency：	260
Package：	SOT-323	Storage Temperature Range：	-55-150
class：	Transistors

2SC4215 数据手册

2SC4215

SOT-323 Transistor(NPN)

SOT-323

1. BASE

2. EMITTER

3. COLLECTOR

Features

Small reverse transfer capacitance: Cre= 0.55pF(typ.)

Low noise figure: NF=2dB (typ.) (f=100 MHz)

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Dimensions in inches and (millimeters)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

℃

P_C

100

150

-55-150

T_J

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_C=100μA,I_E=0

I_C=1mA,I_B=0

I_E=100μA,I_C=0

V_CB=40V,I_E=0

0.1

0.5

200

μA

I_EBO

V_EB=4V,I_C=0

DC current gain

h_FE

V_CE=6V,I_C=1mA

V_CE=6V,I_C=1mA, f=30MH_Z

V_CE=6V,I_C=1mA,

V_CB=10V,f=1MHz

Collector-base time constant

Transition frequency

Cc.r_bb′

f_T

MHz

260

550

0.55

Reverse transfer capacitance

Noise figure

C_re

V_CC=6V,I_c=1mA,f=100MH_Z

Power gain

Gpe

CLASSIFICATION OF h_FE

Rank

40-80

Range

70-140

100-200

Marking

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

12 3

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