Datasheet > 2SC4215

2SC4215

更新时间： 2024-11-27 06:23:27

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描述
Silicon NPN Epitaxial

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中文翻译

获取价格

数据手册

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2SC4215 数据手册

SMD Type

TransistIoCrs

Silicon NPN Epitaxial

2SC4215

Features

Small reverse transfer capacitance: Cre = 0.55 pF (typ.)

Low noise figure: NF = 2dB (typ.) (f = 100 MHz)

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

I^B

Collector power dissipation

Junction temperature

Storage temperature

P^C

100

T^j

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Collector cut-off current

Emitter cut-off current

DC current gain

Symbol

I^CBO

I^EBO

h^FE

Testconditons

Min

Typ

Max

0.1

Unit

ìA

VCB = 40 V, IE = 0

VEB = 4 V, IC = 0

0.5

ìA

VCE = 6 V, IC = 1 mA

VCB = 10 V, f = 1MHz

VCE = 6 V, IC = 1 mA

200

Reverse transfer capacitance

Transition frequency

Collector-base time constant

Noise figure

C^re

0.55

550

MHz

f^T

260

Cc.rbb' V^CB= 6 V, IE = -1mA, f = 30 MHz

VCC = 6V, IE = -1mA, f = 100MHz,

G^pe

Power gain

hFE Classification

Marking

hFE

40 80

70 140

100 200

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2SC4215-OTE85R	TOSHIBA	获取价格	TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
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