Datasheet > 2SC4215

2SC4215

更新时间： 2023-12-06 20:11:10

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	500K
描述
SOT-323

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中文翻译

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数据手册

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2SC4215 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

SOT-323

2SC4215 TRANSISTOR (NPN)

FEATURES

1. BASE

Small reverse transfer capacitance: Cre= 0.55pF(typ.)

Low noise figure: NF=2dB (typ.) (f=100 MHz)

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

P_C

100

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=100μA,I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_C=1mA,I_B=0

I_E=100μA,I_C=0

V_CB=40V,I_E=0

0.1

0.5

200

μA

I_EBO

V_EB=4V,I_C=0

DC current gain

h_FE

V_CE=6V,I_C=1mA

V_CE=6V,I_C=1mA, f=30MH_Z

V_CE=6V,I_C=1mA,

V_CB=10V,f=1MHz

Collector-base time constant

Transition frequency

Cc.r_bb′

f_T

MHz

260

550

0.55

Reverse transfer capacitance

Noise figure

C_re

V_CC=6V,I_c=1mA,f=100MH_Z

Power gain

Gpe

CLASSIFICATION OF h_FE

Rank

40-80

Range

70-140

100-200

Marking

www.jscj-elec.com

Rev. - 2.0

12 3

中文翻译

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