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2SC4210_03 PDF预览

2SC4210_03

更新时间: 2024-01-05 18:41:58
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器功率放大器
页数 文件大小 规格书
3页 83K
描述
Audio Power Amplifier Applications

2SC4210_03 数据手册

 浏览型号2SC4210_03的Datasheet PDF文件第2页浏览型号2SC4210_03的Datasheet PDF文件第3页 
                                                        
                                                        
                                                                     
                                                                     
2SC4210  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC4210  
Audio Power Amplifier Applications  
Unit: mm  
·
·
High DC current gain: h = 100~320  
FE  
Complementary to 2SA1621  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
35  
30  
V
V
CBO  
CEO  
EBO  
5
V
I
800  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
160  
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
200  
C
T
150  
j
T
-55~150  
stg  
JEDEC  
JEITA  
TO-236MOD  
SC-59  
TOSHIBA  
2-3F1A  
Weight: 0.012 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
V
V
= 35 V, I = 0  
¾
¾
30  
¾
¾
¾
0.1  
0.1  
¾
mA  
mA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
= 5 V, I = 0  
C
EBO  
(BR) CEO  
Collector-emitter breakdown voltage  
V
I = 10 mA, I = 0  
C B  
h
FE (1)  
V
V
= 1 V, I = 100 mA  
100  
¾
320  
CE  
C
DC current gain  
(Note)  
h
= 1 V, I = 700 mA  
35  
¾
¾
¾
¾
0.5  
0.8  
¾
FE (2)  
CE  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= 500 mA, I = 20 mA  
V
V
CE (sat)  
C
B
V
V
V
V
= 1 V, I = 10 mA  
0.5  
¾
¾
BE  
CE  
CE  
CB  
C
Transition frequency  
f
= 5 V, I = 10 mA  
120  
13  
MHz  
pF  
T
C
Collector output capacitance  
C
= 10 V, I = 0, f = 1 MHz  
¾
¾
ob  
E
Note: h  
classification O: 100~200, Y: 160~320  
FE (1)  
Marking  
1
2003-03-25  

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TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
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TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-26MOD