生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.72 |
最大集电极电流 (IC): | 0.3 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
JEDEC-95代码: | TO-236 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
VCEsat-Max: | 0.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC4209YTE85R | TOSHIBA |
获取价格 |
TRANSISTOR 300 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma | |
2SC4210 | TYSEMI |
获取价格 |
High DC current gain: hFE = 100 320.Collector-base voltage VCBO 35 V | |
2SC4210 | TOSHIBA |
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NPN EPITAXIAL TYPE (AUDIO POWER AMPLIFIER APPLICATIONS) | |
2SC4210 | KEXIN |
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Silicon NPN Epitaxial | |
2SC4210_03 | TOSHIBA |
获取价格 |
Audio Power Amplifier Applications | |
2SC4210O | ETC |
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TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | SC-59 | |
2SC4210-O | TOSHIBA |
获取价格 |
TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-26MOD | |
2SC4210-O(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,NPN,30V V(BR)CEO,800MA I(C),SC-59 | |
2SC4210-O(TE85L,F) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,NPN,30V V(BR)CEO,800MA I(C),SC-59 | |
2SC4210OTE85L | TOSHIBA |
获取价格 |
TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma |