Datasheet > 2SC4208Q

2SC4208Q

更新时间： 2024-11-23 23:20:19

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
4页	60K
描述
TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 500MA I(C) \| TO-92VAR

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中文翻译

获取价格

数据手册

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2SC4208Q 数据手册

Transistor

2SC4208, 2SC4208A

Silicon NPN epitaxial planer type

For low-frequency output amplification and driver amplification

Complementary to 2SA1619 and 2SA1619A

Unit: mm

5.0±0.2

4.0±0.2

Features

■

●

Low collector to emitter saturation voltage V_CE(sat)

●

Output of 1W is obtained with a complementary pair with

2SA1619 and 2SA1619A.

●

Allowing supply with the radial taping.

0.7±0.1

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

Ratings

Unit

0.45⁺^–0⁰^.^.¹¹⁵

1.27

0.45⁺^–0⁰^.^.¹¹⁵

Collector to

2SC4208

V_CBO

2SC4208A

2SC4208

base voltage

Collector to

1.27

V_CEO

emitter voltage 2SC4208A

Emitter to base voltage

Peak collector current

Collector current

1:Emitter

2:Collector

3:Base

TO–92NL Package

2 3

V_EBO

I_CP

I_C

2.54±0.15

500

Collector power dissipation

Junction temperature

Storage temperature

P_C

T_j

150

˚C

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

Collector cutoff current

V_CB= 20V, I_E= 0

0.1

µA

Collector to base

voltage

2SC4208

2SC4208A

V_CBO

I_C= 10µA, I_E= 0

Collector to emitter 2SC4208

V_CEO

V_EBO

I_C= 10mA, I_B= 0

voltage

2SC4208A

Emitter to base voltage

I_E= 10µA, I_C= 0

h_FE1

h_FE2

V_CE= 10V, I_C= 150mA^*2

V_CE= 10V, I_B= 500mA^*2

I_C= 300mA, I_B= 30mA

340

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

0.35

1.1

150

0.6

1.5

Transition frequency

f_T

V_CB= 10V, I_E= –50mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

MHz

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

85 ~ 170

120 ~ 240

170 ~ 340

12 3 4

中文翻译

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