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2SC4093-T2RBG PDF预览

2SC4093-T2RBG

更新时间: 2024-11-05 13:04:19
品牌 Logo 应用领域
日电电子 - NEC 晶体放大器小信号双极晶体管射频小信号双极晶体管微波光电二极管ISM频段
页数 文件大小 规格书
8页 71K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-4

2SC4093-T2RBG 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknown风险等级:5.58
其他特性:LOW NOISE最大集电极电流 (IC):0.1 A
基于收集器的最大容量:0.95 pF集电极-发射极最大电压:12 V
配置:SINGLE最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G4JESD-609代码:e6
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN BISMUTH
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):7000 MHz
Base Number Matches:1

2SC4093-T2RBG 数据手册

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DATA SHEET  
SILICON TRANSISTOR  
2SC4093  
MICROWAVE LOW NOISE AMPLIFIER  
NPN SILICON EPITAXIAL TRANSISTOR  
4 PINS MINI MOLD  
DESCRIPTION  
PACKAGE DIMENSIONS  
The 2SC4093 is an NPN silicon epitaxial transistor designed for low  
noise amplifier at VHF, UHF and CATV band.  
(Units: mm)  
+0.2  
0.3  
+0.2  
0.1  
It has large dynamic range and good current characteritics, and is  
contatined in a 4 pins mini-mold package which enables high-isolation  
gain.  
2.8  
1.5  
FEATURES  
Low Noise  
NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1.0 GHz  
High Power Gains  
S21e 2 = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1.0 GHz  
5°  
5°  
5°  
ORDERING INFORMATION  
PART  
5°  
QUANTITY  
NUMBER  
PACKING STYLE  
2SC4093-T1 3 Kpcs/Reel. Embossed tape 8 mm wide.  
Pin3 (Base), Pin4 (Emitter) face to perforation side  
PIN CONNECTIONS  
1. Collector  
2. Emitter  
of the tape.  
3. Base  
4. Emitter  
2SC4093-T2 3 Kpcs/Reel. Embossed tape 8 mm wide.  
Pin1 (Collector), Pin2 (Emitter) face to perforation  
side of the tape.  
* Please contact with responsible NEC person, if you require evaluation  
sample.  
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4093)  
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
20  
12  
V
V
3.0  
V
100  
mA  
mW  
C
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
200  
Tj  
150  
Tstg  
65 to +150  
C
Document No. P10365EJ3V1DS00 (3rd edition)  
Date Published March 1997 N  
Printed in Japan  
©
1991  

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