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2SC4093-T1RBH

更新时间: 2024-11-07 03:17:51
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
8页 63K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,

2SC4093-T1RBH 数据手册

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DATA SHEET  
SILICON TRANSISTOR  
2SC4093  
MICROWAVE LOW NOISE AMPLIFIER  
NPN SILICON EPITAXIAL TRANSISTOR  
4 PINS MINI MOLD  
DESCRIPTION  
PACKAGE DIMENSIONS  
The 2SC4093 is an NPN silicon epitaxial transistor designed for low  
noise amplifier at VHF, UHF and CATV band.  
(Units: mm)  
+0.2  
0.3  
+0.2  
0.1  
It has large dynamic range and good current characteritics, and is  
contatined in a 4 pins mini-mold package which enables high-isolation  
gain.  
2.8  
1.5  
FEATURES  
Low Noise  
NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1.0 GHz  
High Power Gains  
S21e 2 = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1.0 GHz  
5°  
5°  
5°  
ORDERING INFORMATION  
PART  
5°  
QUANTITY  
NUMBER  
PACKING STYLE  
2SC4093-T1 3 Kpcs/Reel. Embossed tape 8 mm wide.  
Pin3 (Base), Pin4 (Emitter) face to perforation side  
PIN CONNECTIONS  
1. Collector  
2. Emitter  
of the tape.  
3. Base  
4. Emitter  
2SC4093-T2 3 Kpcs/Reel. Embossed tape 8 mm wide.  
Pin1 (Collector), Pin2 (Emitter) face to perforation  
side of the tape.  
* Please contact with responsible NEC person, if you require evaluation  
sample.  
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4093)  
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
20  
12  
V
V
3.0  
V
100  
mA  
mW  
C
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
200  
Tj  
150  
Tstg  
65 to +150  
C
Document No. P10365EJ3V1DS00 (3rd edition)  
Date Published March 1997 N  
Printed in Japan  
©
1991  

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