是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 最大集电极电流 (IC): | 0.1 A |
配置: | Single | 最小直流电流增益 (hFE): | 40 |
JESD-609代码: | e0 | 最高工作温度: | 150 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.25 W |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3927 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
2SC3927 | ISC |
获取价格 |
isc Silicon NPN Power Transistor | |
2SC3927 | SANKEN |
获取价格 |
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) | |
2SC3927_07 | SANKEN |
获取价格 |
Silicon NPN Triple Diffused Planar Transistor | |
2SC3928 | ISAHAYA |
获取价格 |
SMALL-SIGNAL TRANSISTOR | |
2SC3928 | MITSUBISHI |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, NPN, Silicon, SC-59, 3 PIN | |
2SC3928_11 | ISAHAYA |
获取价格 |
FOR LOW FREQUENCY AMPLIFY APPLICATION | |
2SC3928-12-1Q | MITSUBISHI |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | |
2SC3928-12-1R | MITSUBISHI |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | |
2SC3928-12-1T | MITSUBISHI |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 |