Datasheet > 2SC3928_11

2SC3928_11

更新时间： 2022-04-20 00:20:23

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
2页	138K
描述
FOR LOW FREQUENCY AMPLIFY APPLICATION

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数据手册

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2SC3928_11 数据手册

〈SMALL-SIGNAL TRANSISTOR〉

2SC3928

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE

OUTLINE DRAWING

Unit：ｍｍ

DESCRIPTION

2.8

1.5

2SC3928 is a super mini package resin sealed

silicon NPN epitaxial transistor,

It is designed for low frequency voltage application.

0.65

①

②

③

FEATURE

●Small collector to emitter saturation voltage.

VCE(sat)=0.3V max

●Excellent linearity of DC forward gain.

●Super mini package for easy mounting

APPLICATION

TERMINAL ONNECTER

①：BASE

For Hybrid IC, small type machine low frequency voltage

Amplify application.

JEITA：SC-59

②：EMITTER

③：COLLECTOR

MAXIMUM RATINGS（Ta=25℃）

Symbol

V_CBO

V_CEO

V_EBO

I _C

Parameter

Ratings

Unit

MARKING

Collector to Base voltage

Collector to Emitter voltage

Emitter to Base voltage

Collector current

H Q

100

℃

P_C

Collector dissipation

Junction temperature

Storage temperature

200

T_j

＋150

-55～＋150

Type name

hFE Item

T_stg

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Typ

Parameter

Symbol

Test conditions

Unit

Min

Max

C to E break down voltage

Collector cut off current

Emitter cut off current

DC forward current gain

C to E Saturation Vlotage

Gain bandwidth product

Collector output capacitance

V(BR)CEO

ICBO

IEBO

I _C=100μA ,R _BE=∞

V _CB=50V, I _E=0mA

V _EB=4V, I _C=0mA

0.5

560

μA

－

hFE

_CE=6V, I _C=1mA

120

(※)

－

hFE

_CE=6V, I _C=0.1mA

VCE(sat) I _C=30mA ,I_B=1.5mA

0.3

_CE=6V, I _E=-10mA

200

2.0

MHz

Cob

V _CB=6V, I _E=0mA,f=1MHz

※： It shows hFE classification at right table.

Item

hFE

Ｑ

Ｒ

Ｓ

120～270

180～390

270～560

ISAHAYA ELECTRONICS CORPORATION

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