Transistor
2SC3929, 2SC3929A
Silicon NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
Complementary to 2SA1531 and 2SA1531A
Features
Low noise voltage NV.
■
2.1±0.1
●
0.425
1.25±0.1
0.425
●
High foward current transfer ratio hFE
.
●
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
1
3
Absolute Maximum Ratings (Ta=25˚C)
■
2
Parameter
2SC3929
Symbol
Ratings
Unit
Collector to
35
VCBO
V
base voltage
Collector to
2SC3929A
2SC3929
55
35
VCEO
V
2SC3929A
emitter voltage
55
0.2±0.1
Emitter to base voltage
Peak collector current
Collector current
VEBO
ICP
IC
5
100
V
mA
mA
mW
˚C
1:Base
2:Emitter
3:Collector
50
EIAJ:SC–70
S–Mini Type Package
Collector power dissipation
Junction temperature
Storage temperature
PC
150
Tj
150
(2SC3929)
Marking symbol : S
(2SC3929A)
Tstg
–55 ~ +150
˚C
T
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
100
1
Unit
nA
VCB = 10V, IE = 0
Collector cutoff current
ICEO
VCE = 10V, IB = 0
µA
Collector to base
voltage
2SC3929
2SC3929A
35
55
35
55
5
VCBO
IC = 10µA, IE = 0
V
Collector to emitter 2SC3929
VCEO
VEBO
IC = 2mA, IB = 0
V
V
voltage
2SC3929A
Emitter to base voltage
IE = 10µA, IC = 0
*
Forward current transfer ratio
hFE
VCE = 5V, IC = 2mA
IC = 100mA, IB = 10mA
180
700
0.6
Collector to emitter saturation voltage VCE(sat)
V
V
Base to emitter voltage
VBE
NV
fT
V
CE = 1V, IC = 100mA
0.7
1
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
VCB = 5V, IE = –2mA, f = 200MHz
Noise voltage
150
mV
Transition frequency
80
MHz
*1
h
Rank classification
FE1
Rank
hFE
R
S
T
180 ~ 360
SR
260 ~ 520
SS
360 ~ 700
ST
2SC3929
Marking
Symbol
2SC3929A
TR
TS
TT
1