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2SC3929A PDF预览

2SC3929A

更新时间: 2024-11-17 06:23:31
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科信 - KEXIN /
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描述
Silicon NPN Epitaxial Planar

2SC3929A 数据手册

  
SMD Type  
Transistors  
Silicon NPN Epitaxial Planar  
2SC3929A  
Features  
Low noise voltage NV.  
High forward current transfer ratio hFE.  
1 Emitter  
2 Base  
3 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
55  
55  
V
5
50  
V
Collector current  
mA  
mA  
mW  
Peak collector current  
Collector power dissipation  
Junction temperature  
Storage temperature  
ICP  
100  
PC  
150  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
IC = 10ìA, IE = 0  
Min  
55  
55  
5
Typ  
0.7  
Max  
Unit  
V
Collector-base voltage  
VCBO  
VCEO  
VEBO  
VBE  
Collector-emitter voltage  
Emitter-base voltage  
IC = 2 mA, IB = 0  
V
IE = 10 ìA, IC = 0  
VCE = 1 V, IC = 100 mA  
VCB = 10 V, IE = 0  
VCE = 10 V, IB = 0  
VCE = 5 V, IC = 2 mA  
V
Base-emitter voltage  
1.0  
0.1  
1
V
Collector-base cutoff current  
Collector-emitter cutoff current  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Transition frequency  
ICBO  
ICEO  
hFE  
ìA  
ìA  
180  
700  
0.6  
VCE(sat) IC = 100 mA, IB = 10 mA  
V
fT  
VCB = 5 V, IE = ?2 mA, f = 200 MHz  
100  
MHz  
VCE = 10 V, IC = 1 mA, GV = 80 dB, Rg  
= 100 kÙ, Function = FLAT  
Noise voltage  
NV  
150  
mV  
hFE Classification  
Marking  
hFE  
TR  
TS  
TT  
360 700  
180 360  
260 520  
1
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